Product Summary

The NTMS4705NR2 is a Power MOSFET. The applications of the device include Notebooks, Graphics Cards, Synchronous Rectification, High Side Switch and DC-DC Converters.

Parametrics

NTMS4705NR2 absolute maximum ratings: (1)Drain-to-Source Voltage, VDSS: 30 V; (2)Gate-to-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, ID: 10 A; (4)Power Dissipation, PD: 1.52 W; (5)Pulsed Drain Current, IDM: 36 A; (6)Operating Junction and Storage Temperature TJ, Tstg: -55 to 150℃; (7)Source Current (Body Diode), IS: 3.0 A; (8)Single Pulse Drain-to-Source Avalanche Energy, EAS: 210 mJ; (9)Lead Temperature for Soldering Purposes, TL: 260℃.

Features

NTMS4705NR2 features: (1)Low RDS(on); (2)Low Gate Charge; (3)Standard SO-8 Single Package; (4)Pb-Free Package is Available.

Diagrams

NTMS4705NR2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
NTMS4705NR2
NTMS4705NR2

ON Semiconductor

MOSFET 30V 12A N-Channel

Data Sheet

Negotiable 
NTMS4705NR2G
NTMS4705NR2G

ON Semiconductor

MOSFET 30V 12A N-Channel

Data Sheet

Negotiable