(China (Mainland))
Product Summary
The M5K4164ANP is a 65 536 bit dynamic RAM fabricated with the high performance N-channel silicongate MOS process. It is ideal for large capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipaiton. The M5K4164ANP operates on a 5V power supply using the on-chip substrate bias generator. It is suitable for main memory unit for computers.
Parametrics
M5K4164ANP absolute maximum ratings: (1)VCC, supply voltage: -1 to 7V; (2)VI, input voltage: -1 to 7V; (3)VO, output voltage: -1 to 7V; (4)IO, output current: 50mA; (5)Pd, power dissipation: 700mW; (6)Topr, operating free-air temperature range: 0 to 70℃; (7)Tstg, storage temperature range: -65 to 150℃.
Features
M5K4164ANP features: (1)single 5V±10% supply; (2)low standby power dissipation: 22mW max; (3)low operating power dissipation: 300mW max; (4)unlatched output enables two-dimensional chip selection and extended page boundary; (5)early-write operation gives common I/O capability; (6)read-modify-write, RAS-only refresh, and page-mode capbilities; (7)all input terminals have low input capaciatance and are directly TTL compatible; (8)output is three-sate and directly TTL-compatible; (9)128 refresh cycles every 2ms; (10)CAS controlled output allows hidden refresh; (11)output data can be held infinitley by CAS.
Diagrams
