(China (Mainland))
Product Summary
The IRFPS3815 is a Power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFPS3815 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFPS3815 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 105A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 74 A; (3)IDM, Pulsed Drain Current: 390A; (4)PD @TC = 25℃, Power Dissipation: 441 W; (5)Linear Derating Factor: 2.9 W/℃; (6)VGS, Gate-to-Source Voltage: ± 30 V; (7)EAS, Single Pulse Avalanche Energy: 1610 mJ; (8)IAR, Avalanche Current: 58 A; (9)EAR, Repetitive Avalanche Energy: 38 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: 3.0 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ).
Features
IRFPS3815 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
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 IRFPS3815 |
International Rectifier |
MOSFET N-CH 150V 105A SUPER247 |
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IRFPS3815PBF |
International Rectifier |
MOSFET |
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