(China (Mainland))
Product Summary
The IRF740B is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The IRF740B is well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Parametrics
IRF740B absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 400 V; (2)ID, Drain Current - Continuous (TC = 25℃): 10 A; (3)- Continuous (TC = 100℃): 6.3 A; (4)IDM, Drain Current - Pulsed: 40 A; (5)VGSS, Gate-Source Voltage: ± 30 V; (6)EAS, Single Pulsed Avalanche Energy: 450 mJ; (7)IAR, Avalanche Current: 10 A; (8)EAR, Repetitive Avalanche Energy: 13.4 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.5 V/ns; (10)PD, Power Dissipation (TC = 25℃): 134 W; (11)- Derate above 25℃: 0.35 W/℃; (12)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (13)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.
Features
IRF740B features: (1)10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V; (2)Low gate charge ( typical 41 nC); (3)Low Crss ( typical 35 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF740B |
Fairchild Semiconductor |
MOSFET 400V N-Channel B-FET |
Data Sheet |
Negotiable |
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IRF740B_Q |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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IRF740BPBF |
Vishay |
MOSFET N-Ch 400V 10A |
Data Sheet |
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