Product Summary

The FM16W08-SG is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. The FM16W08-SG provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. The FM16W08-SG provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions.

Parametrics

FM16W08-SG absolute maximum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN Voltage on any pin with respect to VSS: -1.0V to +7.0V and VIN < VDD+1.0V; (3)TSTG Storage Temperature: -55℃ to + 125℃; (4)TLEAD Lead Temperature (Soldering, 10 seconds): 260℃; (5)VESD Electrostatic Discharge Voltage: Human Body Model (AEC-Q100-002 Rev. E): 4kV; Charged Device Model (AEC-Q100-011 Rev. B): 1.25kV; Machine Model (AEC-Q100-003 Rev. E): 300V; (6)Package Moisture Sensitivity Level: MSL-2.

Features

FM16W08-SG features: (1)64Kbit Ferroelectric Nonvolatile RAM: Organized as 8,192 × 8 bits, High Endurance 100 Trillion (1014) Read/Writes, 38 year Data Retention (@ +75C), NoDelay Writes, Advanced High-Reliability Ferroelectric Process; (2)Low Power Operation; Wide Voltage Operation 2.7V to 5.5V, 12 mA Active Current, 20 μA (typ.) Standby Current.

Diagrams

FM16W08-SG diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FM16W08-SG
FM16W08-SG
Ramtron
F-RAM Parallel FRAM 64k 3-5V
Data Sheet
0-1: $2.88
1-10: $2.59
10-50: $2.34
50-100: $2.12
FM16W08-SGTR
FM16W08-SGTR
Ramtron
F-RAM Parallel FRAM 64k 3-5V
Data Sheet
0-1000: $1.72